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| Excelics DATA SHEET 180 Min. (All Leads) EFA060B-70 Low Distortion GaAs Power FET 44 19 4 * * * * * * NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +24.0dBm TYPICAL OUTPUT POWER 7.5 dB TYPICAL POWER GAIN AT 12GHz 0.3 X 600 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY 20 D S S 40 G All Dimensions In mils. ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=12GHz Vds=6V, Ids=50% Idss f=18GHz Gain at 1dB Compression f=12GHz Vds=6V, Ids=50% Idss f=18GHz Power Added Efficiency at 1dB Compression Vds=6V, Ids=50% Idss f=12GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=1.5mA -10 -6 MIN 22.0 6.0 TYP 24.0 24.0 7.5 5.0 33 100 70 170 90 -2.0 -15 -14 175* o MAX UNIT dBm dB % 240 mA mS -3.5 V V V C/W Drain Breakdown Voltage Igd=1.0mA Source Breakdown Voltage Igs=1.0mA Thermal Resistance * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 10V 6V Vds Gate-Source Voltage -6V -4V Vgs Drain Current Idss 110mA Ids Forward Gate Current 15mA 2.5mA Igsf Input Power 22dBm @ 3dB Compression Pin Channel Temperature 175oC 150 oC Tch Storage Temperature -65/175oC -65/150 oC Tstg Total Power Dissipation 780mW 650mW Pt Note: 1 Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com 70 EFA060B-70 DATA SHEET Low Distortion GaAs Power FET S-PARAMETERS FREQ (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 --- S11 --MAG ANG 0.959 -36.8 0.881 -70.5 0.810 -99.4 0.753 -126.7 0.712 -151.3 0.687 -169.6 0.669 170.6 0.660 152.5 0.676 127.8 0.701 108.4 0.712 95.0 0.734 79.3 0.786 64.1 0.814 50.9 0.822 36.8 0.827 21.3 0.815 10.9 0.824 2.0 0.842 -12.9 0.865 -25.0 0.837 -34.9 0.803 -48.2 0.828 -65.6 0.832 -79.0 0.762 -97.6 0.779 -120.5 6V, 1/2 Idss --- S21 ----- S12 --MAG ANG MAG ANG 5.607 150.2 0.021 69.7 4.945 123.1 0.036 52.6 4.231 100.1 0.044 41.1 3.718 79.4 0.046 32.4 3.295 60.6 0.048 28.1 2.954 43.8 0.050 27.6 2.667 27.3 0.052 27.4 2.440 11.7 0.055 30.2 2.207 -5.2 0.064 29.7 2.002 -21.9 0.074 23.8 1.914 -38.1 0.087 16.1 1.812 -55.4 0.100 6.7 1.623 -71.5 0.107 -4.6 1.436 -86.6 0.108 -14.9 1.325 -104.7 0.113 -29.1 1.192 -124.5 0.113 -45.2 1.036 -138.3 0.111 -52.3 0.978 -151.3 0.119 -69.9 0.870 -168.6 0.103 -84.5 0.793 174.4 0.098 -99.1 0.737 158.8 0.095 -113.3 0.703 144.6 0.099 -127.5 0.636 126.3 0.099 -145.0 0.563 107.3 0.104 -163.0 0.529 90.4 0.119 -179.7 0.523 72.5 0.149 163.3 --- S22 --MAG ANG 0.673 -15.7 0.632 -31.5 0.600 -44.6 0.577 -54.8 0.546 -64.9 0.516 -78.2 0.508 -90.3 0.490 -101.7 0.490 -111.1 0.482 -126.3 0.478 -147.5 0.485 -168.1 0.477 173.7 0.486 155.8 0.532 132.1 0.560 107.3 0.563 92.5 0.622 79.4 0.654 62.6 0.709 45.8 0.716 32.5 0.707 22.7 0.692 3.5 0.696 -18.6 0.727 -31.7 0.710 -48.8 |
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